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Si7423DN
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.018 at V GS = - 10 V
0.030 at V GS = - 4.5 V
I D (A)
- 11.7
- 9.0
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? New PowerPAK ? Package
- Low Thermal Resistance, R thJC
- Low 1.07 mm Profile
PowerPAK 1212-8
APPLICATIONS
? Battery Switch
3.30 mm
1
S
S
3.30 mm
S
2
3
S
G
D
4
G
8
7
D
D
6
5
D
Bottom View
Ordering Information: Si7423DN-T1-E3 (Lead (Pb)-free)
Si7423DN-T1-GE3 (Lead (Pb)-free) and Halogen-free
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
- 30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
- 11.7
- 8.4
- 30
- 7.4
- 5.4
A
Continuous Source Current (Diode Conduction) a
I S
- 3.2
- 1.3
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
3.8
2.0
- 55 to 150
260
1.5
0.8
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
26
65
1.9
33
81
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72582
S-83051-Rev. C, 29-Dec-08
www.vishay.com
1
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